Modeling of Sonos Memory Cell Erase Cycle
نویسندگان
چکیده
منابع مشابه
Characterization of Tunnel Oxide Degradation under NAND-type Program/Erase Stresses of SONOS Flash Memory Cell Transistors with W×L=30 nm×30 nm Channel
Tunnel oxide degradation under the program/erase stress by the Fowler-Nordheim tunneling of NAND-type SONOS flash memory cell transistors (W×L=30×30 nm) fabricated on a fully depleted SOI substrate was investigated. The variation in the interface traps and oxide traps in the bottom oxide was analyzed. The result shows that the degradation of the threshold voltage window between the program and ...
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ژورنال
عنوان ژورنال: Integrated Ferroelectrics
سال: 2012
ISSN: 1058-4587,1607-8489
DOI: 10.1080/10584587.2012.660819